1、LinePAL制式(逐行倒相制式)SEquentialCouleurAvecMemoireSECAM制式(顺序与存储彩色电视系统)半导体词汇3A1.VideoDemand视频点播2.DPIDotPerInch点每英寸3.A.M.U原子质量数4.ADIAfterdevelopinspection显影后检视5.AEI蚀科后检查6.Alignment排成一直线,对平7.Alloy融合:电压与电流成线性关系,降低接触的阻值8.ARC:anti-reflectcoating防反射层9.ASHER:一种干法刻蚀方式10.ASI光阻去除后检查B11.Backside晶片背面12.Etch背面蚀刻13.Bea
2、m-Current电子束电流14.BPSG:含有硼磷的硅玻璃15.Break中断,stepper机台内中途停止键C16.Cassette装晶片的晶舟17.CD:criticaldimension关键性尺寸18.Chamber反应室19.Chart图表20.Childlot子批21.(die)晶粒22.CMP化学机械研磨23.Coater光阻覆盖(机台)24.Coating涂布,光阻覆盖25.ContactHole接触窗26.ControlWafer控片27.Criticallayer重要层28.CVD化学气相淀积29.Cycletime生产周期D30.Defect缺陷31.DEP:deposi
3、t淀积32.Descum预处理33.Developer显影液;显影(机台)34.Development显影35.DG:dualgate双门36.DIwater去离子水37.Diffusion扩散38.Doping掺杂39.Dose剂量40.Downgrade降级41.DRC:designrulecheck设计规则检查42.DryClean干洗43.Duedate交期44.Dummywafer挡片E45.E/R:etchrate蚀刻速率46.EE设备工程师47.EndPoint蚀刻终点48.ESD:electrostaticdischarge/electrostaticdamage静电离子损伤4
4、9.ET:蚀刻50.Exhaust排气(将管路中的空气排除)51.Exposure曝光F52.FAB工厂53.FIB:focusedionbeam聚焦离子束54.FieldOxide场氧化层55.Flatness平坦度56.Focus焦距57.Foundry代工58.FSG:含有氟的硅玻璃59.Furnace炉管G60.GOI:oxideintegrity门氧化层完整性H61.H.M.D.SHexamethyldisilazane,经去水烘烤的晶片,将涂上一层增加光阻与晶片表面附着力的化合物,称H.M.D.S62.HCI:hotcarrierinjection热载流子注入63.HDP:high
5、densityplasma高密度等离子体64.High-Voltage高压65.Hotbake烘烤I66.ID辨认,鉴定67.Implant植入L68.Layer层次69.LDD:lightlydopeddrain轻掺杂漏70.Localdefocus局部失焦因机台或晶片造成之脏污71.LOCOS:localoxidationofsilicon局部氧化72.Loop巡路73.Lot批M74.Mask(reticle)光罩75.Merge合并76.MetalVia金属接触窗77.MFG制造部78.Mid-Current中电流79.部门N80.NIT:Si3N4氮化硅81.Non-critical
6、非重要82.NP:n-dopedplus(N+)N型重掺杂83.NW:wellN阱O84.OD:definition定义氧化层85.OM:opticmicroscope光学显微镜86.OOC超出控制界线87.OOS超出规格界线88.Over过蚀刻89.flow溢出90.Overlay测量前层与本层之间曝光的准确度91.OX:SiO2二氧化硅P92.P.R.Photoresisit光阻93.P1:poly多晶硅94.PA;passivation钝化层95.Parent母批96.Particle含尘量/微尘粒子97.PE:1.processengineer;2.enhance1、工艺工程师2、等离
7、子体增强98.PH:photo黄光或微影99.Pilot实验的100.电浆101.Pod装晶舟与晶片的盒子102.Polymer聚合物103.PORProcessrecord104.PP:p-dopedplus(P+)P型重掺杂105.PR:resist106.PVD物理气相淀积107.PW:P阱Q108.Queue等待时间R109.R/C:runcard运作卡110.Recipe程式111.Release放行112.Resistance电阻113.Reticle114.RF射频115.RM:remove.消除116.Rotation旋转117.RTA:rapidthermalanneal迅速
8、热退火118.RTP:迅速热处理S119.SA:salicide硅化金属120.SAB:block硅化金属阻止区121.SAC:sacrifice牺牲层122.Scratch刮伤123.Selectivity选择比124.SEM:scanningelectron扫描式电子显微镜125.Slot槽位126.Source-Head离子源127.SPC制程统计管制128.Spin129.旋干130.Sputter溅射131.SRO:Sirich富氧硅132.Stocker仓储133.Stress内应力134.STRIP:一种湿法刻蚀方式T135.TEOS(CH3CH2O)4Si四乙氧基硅烷/正硅酸四
9、乙酯,常温下液态。作LPCVD/PECVD生长SiO2的原料。又指用TEOS生长得到的SiO2层。136.Ti钛137.TiN氮化钛138.TM:topmetal顶层金属层139.TORToolU140.Under蚀刻不足141.USG:undoped硅玻璃W142.W(Tungsten)钨143.WEE周边曝光其它144.mainframe主机145.cassette晶片盒146.amplifier放大器147.enclosure外壳148.wrench扳手149.swagelok接头锁紧螺母150.clamp夹子151.actuator激励152.STIshallowtrenchisola
10、ntion浅沟道隔离层153.SAB硅铝块154.UBM球下金属层镀模工艺155.RDL金属连线重排工艺156.RIEreactinv反应离子etch157.ICPinductivecouple感应等离子体158.thinfilmtransistor薄模晶体管159.ALDatomicdeposition原子层淀积160.BGAballgridarray高脚封装161.AASabsorptionsspectroscopy原子吸附光谱162.AFMforcemicroscopy原子力显微163.ASIC特定用途集成电路164.ATE自动检测设备165.SIPself-ionized自电离电浆16
11、6.IGBT绝缘门双极晶体管167.PMDpremetaldielectric电容168.TCUtemperaturecontrolunit温度控制设备169.arcchamber起弧室170.vaporizer蒸发器171.filament灯丝172.repeller反射板173.ELSextendedlifesource高寿命离子源174.analyzermagnet磁分析器175.postaccel后加速器176.quadrupolelens磁聚焦透镜177.disk/flagfaraday束流测量器178.e-shower中性化电子子发生器179.extrantionelectrode
12、高压吸极180.disk靶盘181.rotarydrive旋转运动182.liner直线往复运动183.gyro两方向偏转184.flataligener平边检测器185.loadlockvalve靶盘腔装片阀186.reservoir水槽187.stringfilter过滤器188.离子交换器189.chiller制冷机190.heatexchange热交换机-BasicOperation基本工艺制程方法Options具体分类Layering增层Oxidation氧化Atmospheric常压氧化法HighPressure高压氧化法RapidThermal快速热氧化ChemicalVapor
13、Deposition化学汽相淀积常压化学汽相淀积(LPCVD)低压化学汽相淀积Enhanced(PECVD)等离子增强化学汽相淀积Epitaxy(VPE)汽相外延法Metaloranic(MOCVD)金属有机物CVDMoleculurBeamEpitaxy(MBE)分子束外延PhysicalDeposition(PCD)物理汽相淀积VacuumEvaporation真空蒸发法Sputtering溅射法Patterning光刻Resist光刻胶Positive正胶工艺Negative负胶工艺暴光系统接触式暴光Proximity接近式暴光ScanningProjection投影式暴光Stepper
14、步进暴光机Sources暴光源Mercury高压汞X-raysX射线E-Beams电子束暴光ImagingProcesses成象工艺Single单层光刻胶Multilayer多层光刻胶AntireflectingLayersOff-AxisIllumination偏轴照明Planarization平坦化ContrastEnhancement对比度提高刻蚀WetChemistry-Liqiud/vapor湿化学刻蚀Dry(Plasma)干法刻蚀Lift-Off剥脱IonMillling离子磨ReactionEtch(RIE)反应离子刻蚀法OpenTube-Horizontal/Vertical(
15、开放式炉管-水平/竖置)ClosedTube封闭炉管Process(RTP)快速热处理ImplantationMedium/HighCurrent中/高电流离子注入Low/HighVoltage(energy)低能量/高能量离子注入Heating热处理Thermal加热Plates加热盘Convection热对流RTP快速加热Radiation热辐射Infrared(IR)红外线加热Yield良率Parameter参数PAC感光化合物ASIC特殊应用集成电路Solvent溶剂Carbide碳Refractive折射Expansion膨胀Strip湿式刻蚀法的一种mentalPSG硼硅玻璃Run
16、cardPOD装晶舟和晶片的盒子A/D军Analog.Digital,模拟/数字ACMagnitude交流幅度交流相位Accuracy精度ActivityModelModel活动模型Additive加成工艺Adhesion附着力Aggressor干扰源AnalogSource模拟源AOI,AutomatedOpticalInspection自动光学检查AssemblyVariant不同的装配版本输出Attributes属性AXI,AutomatedX-ray自动X光检查BIST,Built-inSelfTest内建的自测试BusRoute总线布线电路基准circuitdiagram电路图Cle
17、mentine专用共形开线设计ClusterPlacement簇布局CM合约制造商CommonImpedance共模阻抗Concurrent并行设计Constant恒压源CooperPour智能覆铜Crosstalk串扰CVT,ComponentVerificationandTracking元件确认与跟踪DC直流幅度Delay延时DelaysDesignforTesting可测试性设计Designator标识DFC,DesignCost面向成本的设计DFM,DesignManufacturing面向制造过程的设计DFR,DesignReliability面向可靠性的设计DFT,Design面向
18、测试的设计DFX,DesignX面向产品的整个生命周期或某个环节的设计DSM,DynamicSetupManagement动态设定管理Dynamic动态布线EDIF,TheElectronicInterchangeFormat电子设计交互格式EIA,ElectronicIndustriesAssociation电子工业协会ElectroCheck动态电性能分析ElectromagneticDisturbance电磁干扰Noise电磁噪声EMC,ElctromagneticCompatibilt电磁兼容EMI,ElectromagneticInterferenceEmulation硬件仿真Eng
19、ineeringChangeOrder原理图与PCB版图的自动对应修改Ensemble多层平面电磁场仿真ESD静电释放FallTime下降时间FalseClocking假时钟FEP氟化乙丙烯FFT,FastFourierTransform快速傅里叶变换FloatLicense网络浮动FrequencyDomain频域GaussianDistribution高斯分布Globalflducial板基准GroundBounce地弹反射GUI,GraphicalUser图形用户界面Harmonica射频微波电路仿真HFSS三维高频结构电磁场仿真IBIS,Input/OutputBufferInform
20、ationSpecification模型ICAM,IntegratedComputerAided在ECCE项目里就是指制作PCBIEEE,TheInstituteElectricalEngineers国际电气和电子工程师协会IGES,InitialGraphicsExchange三维立体几何模型和工程描述的标准ImageFiducial阻抗In-Circuit-Test在线测试Initial初始电压InputRise输入跃升时间IPC,ThePackagingInterconnect封装与互连协会IPO,InteractiveOptimizaton交互过程优化ISO,TheInternationalStandardsOrganization国际标准化组织JJumper跳线LinearSuit线性设计软件包个别基准manufacturing制造业MCMs,Multi-ChipModules多芯片组件MDE,MaxwellEnvironmentNo
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