静电保护阵列SOT系列.pdf

1、All data is subject to change,Please check our data sheets at www ruilon com for updates.2012 RuiLong Yuan,Inc.ESD 01ULTRA LOW CAPACITANCE TVS/ESD ARRAYRLST236A054LV are surge rated diode arrays designed to protect high speed data interfaces.The LV series hasbeen specifically designed to protect sen

2、sitive components which are connected to data and transmission lines from overvoltage caused by electrostatic discharge(ESD),electrical fast transients(EFT),and lightning.The unique design of the LV series devices incorporates eight surge rated,low capacitance steering diodes and a TVS diode in a si

3、ngle package.During transient conditions,the steering diodes direct the transient to either the positive side of the power supply line or to ground.The internal TVS diode prevents over-voltage on the power line,protecting any downstream components.The RLST236A054LV has a low typical capacitance of 3

4、pF and operates with virtually no insertion loss to 1GHz.This makes the device ideal for protection of high-speed data lines such as USB 2.0,Firewire,DVI,and gigabit Ethernet interfaces.The low capacitance array configuration allows the user to protect four high-speed data or transmission lines.The

5、low inductance construction minimizes voltage overshoot during high current surges.They may be used to meet the ESD immunity requirements of IEC 61000-4-2,Level 4(15kV air,8kV contact discharge).Description Srand-off Voltage:5v Peak Power up to 300W8*20s Pulse Low Leakage current IEC61000-4-2 Level

6、4 ESD Protection IEC61000-4-4 Level 4 EFT Protection Low capacitance:0.7pF typical SOT-23 6L package Molding compound flammability rating:UL 94V-0 Packaging:Tape and Reel per EIA 481 pb-Free Packages are AuailableFeaturesMechanical CharacteristicsApplications USB 2.0 Power and Data Line Protection V

7、ideo Graphics Cards Monitors and Flat Panel Displays Digital Video Interface(DVI)10/100/1000 Ethernet Notebook Computers SIM Ports ATM Interfaces IEEE 1394 Firewire PortsPin ConfigurationCircuit DiagramRLST236A054LV Series513462All data is subject to change,Please check our data sheets at www ruilon

8、 com for updates.2012 RuiLong Yuan,Inc.ESD 02Protection ProductsAbsolute Maximum RatingElectrical Characteristics(T=25oC)RatingSymbol Value UnitsPeak Pulse Power(tp=8/20s)PPK300WattsESD per IEC 61000-4-2(Air)ESD per IEC 61000-4-2(Contact)VESD158kVLead Soldering TemperatureTK260(10 sec.)COperating Te

9、mperatureTJ-55 to+125CStorage TemperatureTSTG-55 to+150 CRLST236A054LVParameter SymbolConditionsMinimumTypicalMaximumUnitsReverse Stand-Off VoltageVRWM-5VReverse Breakdown VoltageVBRIt=1mA67-VReverse Leakage CurrentIRVRWM=5V,T=25CPin 5 to 2-5AClamping VoltageVCIPP=1A,tp=8/20sAny I/O pin to Ground-12

10、VJunction CapacitanceCjVR=0V,f=1MHzAny I/O pin to Ground-1.21.5pFVR=0V,f=1MHzBetween I/O pins-0.7-pFAll data is subject to change,Please check our data sheets at www ruilon com for updates.2012 RuiLong Yuan,Inc.ESD 03Protection ProductsTypical CharacteristicsNon-Repetitive Peak Pulse Power vs.Pulse

11、TimePower Derating Curve01020304050607080901001100255075100125150Ambient Temperature-TA(oC)%of Rated Power or IPPClamping Voltage vs.Peak Pulse CurrentPulse WaveformForward Voltage vs.Forward CurrentNormalized Capacitance vs.Reverse Voltage0.005.0010.0015.0020.0025.0030.000.002.004.006.008.0010.0012

12、.00Peak Pulse Current-IPP(A)Clamping Voltage-VC(V)Waveform Parameters:tr=8std=20s0.001.002.003.004.005.006.007.000.002.004.006.008.0010.0012.00Forward Current-IF(A)Forward Voltage-VF(V)Waveform Parameters:tr=8std=20s0.010.11100.11101001000Pulse Duration-tp(s)Peak Pulse Power-PPk(kW)01020304050607080

13、90100110051015202530Time(s)Percent of IPPe-ttd=IPP/2Waveform Parameters:tr=8std=20s00.20.40.60.811.21.4012345Reverse Voltage-VR(V)CJ(VR)/CJ(VR=0)f=1 MHzAll data is subject to change,Please check our data sheets at www ruilon com for updates.2012 RuiLong Yuan,Inc.ESD 043 dB/CH1S21LOGREF 0 dBSTART.030

14、0 00 MHzSTOP3 000.000000 MHzCH1S21LOG20 dB/REF 0 dBSTART.0300 00 MHzSTOP3 000.000000 MHzk l aT ssorC gol anA12S ssoL noi t resnIProtection ProductsTypical CharacteristicsAll data is subject to change,Please check our data sheets at www ruilon com for updates.2012 RuiLong Yuan,Inc.ESD 05Device Connec

15、tion Options for Protection of FourHigh-Speed Data LinesThe RLST236A054LV TVS is designed to protect four data lines from transient over-voltages by clamping them to afixed reference.When the voltage on the protected line exceeds the reference voltage(plus diode VF)the steering diodes are forward bi

16、ased,conducting the transient current away from the sensitive circuitry.Data lines are connected at pins 1,3,4 and 6.The negative reference(REF1)is connected at pin 2.This pin should be connected directly to a ground plane on the board for best results.The path length is kept as short as possible to

17、 minimize parasitic inductance.The positive reference(REF2)is connected at pin 5.The options for connecting the positive reference are as follows:1.To protect data lines and the power line,connect pin 5 directly to the positive supply rail(VCC).In this configuration the data lines are referenced to

18、the supply voltage.The internal TVS diode prevents over-voltage on the supply rail.2.The RLST236A054LV can be isolated from the power supply by adding a series resistor between pin 5and VCC.A value of 100k is recommended.The internal TVS and steering diodes remain biased,providing the advantage of l

19、ower capacitance.3.In applications where no positive supply reference is available,or complete supply isolation is desired,the internal TVS may be used as the reference.In this case,pin 5 is not connected.The steering diodes will begin to conduct when the voltage on the protected line exceeds the wo

20、rking voltage of the TVS(plus one diode drop ).ESD Protection With RLST236A054LV.RLST236A054LV are optimized for ESD protection using the rail-to-rail topology.Along with good board layout,these devices virtually eliminate the disadvantages of using discrete components to implement this topology.Con

21、sider the situation shown in Figure 1 where discrete diodes or diode arrays are configured for rail-torail protection on a high speed line.During positive duration ESD events,the top diode will be forward biased when the voltage on the protected line exceedsProtection ProductsApplications Informatio

22、nData Line and Power Supply Protection Using Vcc asreferenceData Line Protection with Bias and Power SupplyIsolation ResistorData Line Protection Using Internal TVS Diode asReferenceAll data is subject to change,Please check our data sheets at www ruilon com for updates.2012 RuiLong Yuan,Inc.the ref

23、erence voltage plus the VF drop of the diode.For negative events,the bottom diode will be biased when the voltage exceeds the VF of the diode.At first approximation,the clamping voltage due to the characteristics of the protection diodes is given by:VC=VCC+VF(for positive duration pulses)VC=-VF(for

24、negative duration pulses)However,for fast rise time transient events,the effects of parasitic inductance must also be considered as shown in Figure 2.Therefore,the actual clamping voltage seen by the protected circuit will be:VC=VCC+VF+LP diESD/dt(for positive duration pulses)VC=-VF-LG diESD/dt(for

25、negative duration pulses)ESD current reaches a peak amplitude of 30A in 1ns for a level 4 ESD contact discharge per IEC 61000-4-2.Therefore,the voltage overshoot due to 1nH of series inductance is:V=LP diESD/dt=1X10-9(30/1X10-9)=30VExample:Consider a VCC=5V,a typical VF of 30V(at 30A)for the steerin

26、g diode and a series trace inductance of 10nH.The clamping voltage seen by the protected IC for a positive 8kV(30A)ESD pulse will be:VC=5V+30V+(10nH X 30V/nH)=335VThis does not take into account that the ESD current is directed into the supply rail,potentially damaging any components that are attach

27、ed to that rail.Also note that it is not uncommon for the VF of discrete diodes to exceed the damage threshold of the protected IC.This is due to the relatively small junction area of typical discrete components.It is also possible that the power dissipation capability of the discrete diode will be

28、exceeded,thus destroying the device.The RLST236A054LV is designed to overcome the inherent disadvantages of using discrete signal diodes for ESD suppression.The RLST236A054LV integrated TVS diodeProtection ProductsApplications InformationFigure 1 -“Rail-Figure 1 -“Rail-Figure 1 -“Rail-Figure 1 -“Rai

29、l-Figure 1-“Rail-T T T T To-Rail”Pro-Rail”Pro-Rail”Pro-Rail”Pro-Rail”Pr o o o o ot t t t tection Tection Tection Tection Tection Topologyopologyopologyopologyopology(First Approximation)(First Approximation)(First Approximation)(First Approximation)(First Approximation)Figure 2-The Effects o f Paras

30、itic InductanceFigure 2-The Effects o f Parasitic InductanceFigure 2-The Effects o f Parasitic InductanceFigure 2-The Effects o f Parasitic InductanceFigure 2-The Effects o f Parasitic InductanceWhen Using Discrete Components to ImplementWhen Using Discrete Components to ImplementWhen Using Discrete

31、 Components to ImplementWhen Using Discrete Components to ImplementWhen Using Discrete Components to ImplementRail-Rail-Rail-Rail-Rail-T T T T To-Rail P ro-Rail P ro-Rail P ro-Rail P ro-Rail P r o o o o ot t t t tectionectionectionectionectionFigure 3-Rail-Figure 3-Rail-Figure 3-Rail-Figure 3-Rail-F

32、igure 3-Rail-T T T T To-Rail P ro-Rail P ro-Rail P ro-Rail P ro-Rail P r o o o o ot t t t tection U singection U singection U singection U singection UsingRailClamRailClamRailClamRailClamRailClam p Tp Tp Tp Tp TV V V V VS ArraS ArraS ArraS ArraS Arra ysysysysysESD 06 All data is subject to change,Pl

33、ease check our data sheets at www ruilon com for updates.2012 RuiLong Yuan,Inc.helps to mitigate the effects of parasitic inductance in the power supply connection.During an ESD event,the current will be directed through the integrated TVSdiode to ground.The maximum voltage seen by the protected IC due to this path will be the clamping voltage of the device.Video Interface ProtectionVideo interfac