静电保护阵列SOT系列.pdf

静电保护阵列SOT系列.pdf

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Alldataissubjecttochange,Pleasecheckourdatasheetsatwwwruiloncomforupdates.2012RuiLongYuan,Inc.ESD01ULTRALOWCAPACITANCETVS/ESDARRAYRLST236A054LVaresurgerateddiodearraysdesignedtoprotecthighspeeddatainterfaces.TheLVserieshasbeenspecificallydesignedtoprotectsensitivecomponentswhichareconnectedtodataandtransmissionlinesfromovervoltagecausedbyelectrostaticdischarge（ESD）,electricalfasttransients（EFT）,andlightning.TheuniquedesignoftheLVseriesdevicesincorporateseightsurgerated,lowcapacitancesteeringdiodesandaTVSdiodeinasinglepackage.Duringtransientconditions,thesteeringdiodesdirectthetransienttoeitherthepositivesideofthepowersupplylineortoground.TheinternalTVSdiodepreventsover-voltageonthepowerline,protectinganydownstreamcomponents.TheRLST236A054LVhasalowtypicalcapacitanceof3pFandoperateswithvirtuallynoinsertionlossto1GHz.Thismakesthedeviceidealforprotectionofhigh-speeddatalinessuchasUSB2.0,Firewire,DVI,andgigabitEthernetinterfaces.Thelowcapacitancearrayconfigurationallowstheusertoprotectfourhigh-speeddataortransmissionlines.Thelowinductanceconstructionminimizesvoltageovershootduringhighcurrentsurges.TheymaybeusedtomeettheESDimmunityrequirementsofIEC61000-4-2,Level4（15kVair,8kVcontactdischarge）.DescriptionSrand-offVoltage:

5vPeakPowerupto300W8*20sPulseLowLeakagecurrentIEC61000-4-2Level4ESDProtectionIEC61000-4-4Level4EFTProtectionLowcapacitance:

0.7pFtypicalSOT-236LpackageMoldingcompoundflammabilityrating:

UL94V-0Packaging:

TapeandReelperEIA481pb-FreePackagesareAuailableFeaturesMechanicalCharacteristicsApplicationsUSB2.0PowerandDataLineProtectionVideoGraphicsCardsMonitorsandFlatPanelDisplaysDigitalVideoInterface（DVI）10/100/1000EthernetNotebookComputersSIMPortsATMInterfacesIEEE1394FirewirePortsPinConfigurationCircuitDiagramRLST236A054LVSeries513462Alldataissubjecttochange,Pleasecheckourdatasheetsatwwwruiloncomforupdates.2012RuiLongYuan,Inc.ESD02ProtectionProductsAbsoluteMaximumRatingElectricalCharacteristics（T=25oC）RatingSymbolValueUnitsPeakPulsePower（tp=8/20s）PPK300WattsESDperIEC61000-4-2（Air）ESDperIEC61000-4-2（Contact）VESD158kVLeadSolderingTemperatureTK260（10sec.）COperatingTemperatureTJ-55to+125CStorageTemperatureTSTG-55to+150CRLST236A054LVParameterSymbolConditionsMinimumTypicalMaximumUnitsReverseStand-OffVoltageVRWM-5VReverseBreakdownVoltageVBRIt=1mA67-VReverseLeakageCurrentIRVRWM=5V,T=25CPin5to2-5AClampingVoltageVCIPP=1A,tp=8/20sAnyI/OpintoGround-12VJunctionCapacitanceCjVR=0V,f=1MHzAnyI/OpintoGround-1.21.5pFVR=0V,f=1MHzBetweenI/Opins-0.7-pFAlldataissubjecttochange,Pleasecheckourdatasheetsatwwwruiloncomforupdates.2012RuiLongYuan,Inc.ESD03ProtectionProductsTypicalCharacteristicsNon-RepetitivePeakPulsePowervs.PulseTimePowerDeratingCurve01020304050607080901001100255075100125150AmbientTemperature-TA（oC）%ofRatedPowerorIPPClampingVoltagevs.PeakPulseCurrentPulseWaveformForwardVoltagevs.ForwardCurrentNormalizedCapacitancevs.ReverseVoltage0.005.0010.0015.0020.0025.0030.000.002.004.006.008.0010.0012.00PeakPulseCurrent-IPP（A）ClampingVoltage-VC（V）WaveformParameters:

tr=8std=20s0.001.002.003.004.005.006.007.000.002.004.006.008.0010.0012.00ForwardCurrent-IF（A）ForwardVoltage-VF（V）WaveformParameters:

tr=8std=20s0.010.11100.11101001000PulseDuration-tp（s）PeakPulsePower-PPk（kW）0102030405060708090100110051015202530Time（s）PercentofIPPe-ttd=IPP/2WaveformParameters:

tr=8std=20s00.20.40.60.811.21.4012345ReverseVoltage-VR（V）CJ（VR）/CJ（VR=0）f=1MHzAlldataissubjecttochange,Pleasecheckourdatasheetsatwwwruiloncomforupdates.2012RuiLongYuan,Inc.ESD043dB/CH1S21LOGREF0dBSTART.030000MHzSTOP3000.000000MHzCH1S21LOG20dB/REF0dBSTART.030000MHzSTOP3000.000000MHzklaTssorCgolanA12SssoLnoitresnIProtectionProductsTypicalCharacteristicsAlldataissubjecttochange,Pleasecheckourdatasheetsatwwwruiloncomforupdates.2012RuiLongYuan,Inc.ESD05DeviceConnectionOptionsforProtectionofFourHigh-SpeedDataLinesTheRLST236A054LVTVSisdesignedtoprotectfourdatalinesfromtransientover-voltagesbyclampingthemtoafixedreference.Whenthevoltageontheprotectedlineexceedsthereferencevoltage（plusdiodeVF）thesteeringdiodesareforwardbiased,conductingthetransientcurrentawayfromthesensitivecircuitry.Datalinesareconnectedatpins1,3,4and6.Thenegativereference（REF1）isconnectedatpin2.Thispinshouldbeconnecteddirectlytoagroundplaneontheboardforbestresults.Thepathlengthiskeptasshortaspossibletominimizeparasiticinductance.Thepositivereference（REF2）isconnectedatpin5.Theoptionsforconnectingthepositivereferenceareasfollows:

1.Toprotectdatalinesandthepowerline,connectpin5directlytothepositivesupplyrail（VCC）.Inthisconfigurationthedatalinesarereferencedtothesupplyvoltage.TheinternalTVSdiodepreventsover-voltageonthesupplyrail.2.TheRLST236A054LVcanbeisolatedfromthepowersupplybyaddingaseriesresistorbetweenpin5andVCC.Avalueof100kisrecommended.TheinternalTVSandsteeringdiodesremainbiased,providingtheadvantageoflowercapacitance.3.Inapplicationswherenopositivesupplyreferenceisavailable,orcompletesupplyisolationisdesired,theinternalTVSmaybeusedasthereference.Inthiscase,pin5isnotconnected.ThesteeringdiodeswillbegintoconductwhenthevoltageontheprotectedlineexceedstheworkingvoltageoftheTVS（plusonediodedrop）.ESDProtectionWithRLST236A054LV.RLST236A054LVareoptimizedforESDprotectionusingtherail-to-railtopology.Alongwithgoodboardlayout,thesedevicesvirtuallyeliminatethedisadvantagesofusingdiscretecomponentstoimplementthistopology.ConsiderthesituationshowninFigure1wherediscretediodesordiodearraysareconfiguredforrail-torailprotectiononahighspeedline.DuringpositivedurationESDevents,thetopdiodewillbeforwardbiasedwhenthevoltageontheprotectedlineexceedsProtectionProductsApplicationsInformationDataLineandPowerSupplyProtectionUsingVccasreferenceDataLineProtectionwithBiasandPowerSupplyIsolationResistorDataLineProtectionUsingInternalTVSDiodeasReferenceAlldataissubjecttochange,Pleasecheckourdatasheetsatwwwruiloncomforupdates.2012RuiLongYuan,Inc.thereferencevoltageplustheVFdropofthediode.Fornegativeevents,thebottomdiodewillbebiasedwhenthevoltageexceedstheVFofthediode.Atfirstapproximation,theclampingvoltageduetothecharacteristicsoftheprotectiondiodesisgivenby:

VC=VCC+VF（forpositivedurationpulses）VC=-VF（fornegativedurationpulses）However,forfastrisetimetransientevents,theeffectsofparasiticinductancemustalsobeconsideredasshowninFigure2.Therefore,theactualclampingvoltageseenbytheprotectedcircuitwillbe:

VC=VCC+VF+LPdiESD/dt（forpositivedurationpulses）VC=-VF-LGdiESD/dt（fornegativedurationpulses）ESDcurrentreachesapeakamplitudeof30Ain1nsforalevel4ESDcontactdischargeperIEC61000-4-2.Therefore,thevoltageovershootdueto1nHofseriesinductanceis:

V=LPdiESD/dt=1X10-9（30/1X10-9）=30VExample:

ConsideraVCC=5V,atypicalVFof30V（at30A）forthesteeringdiodeandaseriestraceinductanceof10nH.TheclampingvoltageseenbytheprotectedICforapositive8kV（30A）ESDpulsewillbe:

VC=5V+30V+（10nHX30V/nH）=335VThisdoesnottakeintoaccountthattheESDcurrentisdirectedintothesupplyrail,potentiallydamaginganycomponentsthatareattachedtothatrail.AlsonotethatitisnotuncommonfortheVFofdiscretediodestoexceedthedamagethresholdoftheprotectedIC.Thisisduetotherelativelysmalljunctionareaoftypicaldiscretecomponents.Itisalsopossiblethatthepowerdissipationcapabilityofthediscretediodewillbeexceeded,thusdestroyingthedevice.TheRLST236A054LVisdesignedtoovercometheinherentdisadvantagesofusingdiscretesignaldiodesforESDsuppression.TheRLST236A054LVintegratedTVSdiodeProtectionProductsApplicationsInformationFigure1-“Rail-Figure1-“Rail-Figure1-“Rail-Figure1-“Rail-Figure1-“Rail-TTTTTo-Rail”Pro-Rail”Pro-Rail”Pro-Rail”Pro-Rail”ProooootttttectionTectionTectionTectionTectionTopologyopologyopologyopologyopology（FirstApproximation）（FirstApproximation）（FirstApproximation）（FirstApproximation）（FirstApproximation）Figure2-TheEffectsofParasiticInductanceFigure2-TheEffectsofParasiticInductanceFigure2-TheEffectsofParasiticInductanceFigure2-TheEffectsofParasiticInductanceFigure2-TheEffectsofParasiticInductanceWhenUsingDiscreteComponentstoImplementWhenUsingDiscreteComponentstoImplementWhenUsingDiscreteComponentstoImplementWhenUsingDiscreteComponentstoImplementWhenUsingDiscreteComponentstoImplementRail-Rail-Rail-Rail-Rail-TTTTTo-RailPro-RailPro-RailPro-RailPro-RailProooootttttectionectionectionectionectionFigure3-Rail-Figure3-Rail-Figure3-Rail-Figure3-Rail-Figure3-Rail-TTTTTo-RailPro-RailPro-RailPro-RailPro-RailProooootttttectionUsingectionUsingectionUsingectionUsingectionUsingRailClamRailClamRailClamRailClamRailClampTpTpTpTpTVVVVVSArraSArraSArraSArraSArraysysysysysESD06Alldataissubjecttochange,Pleasecheckourdatasheetsatwwwruiloncomforupdates.2012RuiLongYuan,Inc.helpstomitigatetheeffectsofparasiticinductanceinthepowersupplyconnection.DuringanESDevent,thecurrentwillbedirectedthroughtheintegratedTVSdiodetoground.ThemaximumvoltageseenbytheprotectedICduetothispathwillbetheclampingvoltageofthedevice.VideoInterfaceProtectionVideointerfac