30VP沟道增强型MOSFETMOS管精.docx
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30VP沟道增强型MOSFETMOS管精
30VP-ChannelEnhancement-ModeMOSFET
VDS(V=-30V
RDS(ON<70mΩ(VGS=-10VRDS(ON<80mΩ(VGS=-4.5VRDS(ON<120mΩ(VGS=-2.5V
XP3401L
3
1
2
SOT–23(TO–236AB
FEATURES
Advancedtrenchprocesstechnology
HighDensityCellDesignForUltraLowOn-ResistanceORDERINGINFORMATION
Device
XP3401LXP3401L-3G
Marking
A1A1
Shipping
3000/Tape&Reel10000/Tape&Reel
MAXIMUMRATINGS(TA=25Cunlessotherwisenoted
Parameter
Drain-SourceVoltage
Gate-SourceVoltageContinuousDrainTA=25°C
A
CurrentTA=70°C
PulsedDrainCurrent
TA=25°C
PowerDissipation
A
o
SymbolVDSVGSIDIDMPDTJ,TSTG
o
Maximum
-30±12-4.2-3.5-301.41-55to150
UnitsVVA
TA=70°C
W°C
JunctionandStorageTemperatureRange
THERMALCHARACTERISTICS(TA=25Cunlessotherwisenoted
Parameter
MaximumJunction-to-AmbientMaximumJunction-to-AmbientC
MaximumJunction-to-Lead
Symbol
t≤10s
Steady-StateSteady-State
2
RθJARθJL
Typ658543Max9012560Units°C/W
°C/W°C/W
A:
ThevalueofRθJAismeasuredwiththedevicemountedon1inFR-4boardwith2oz.Copper,inastillairenvironmentwithTA=25°C.Thevalueinanygivenapplicationdependsontheuser'sspecificboarddesign.Thecurrentratingisbasedonthet≤10sthermalresistancerating.
B:
Repetitiverating,pulsewidthlimitedbyjunctiontemperature.
C.TheRθJAisthesumofthethermalimpedencefromjunctiontoleadRθJLandleadtoambient.
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ELECTRICALCHARACTERISTICS(TA=25CunlessotherwisenotedSymbolParameterSTATICPARAMETERSBVDSSDrain-SourceBreakdownVoltageIDSSIGSSVGS(thID(ONRDS(ON
ZeroGateVoltageDrainCurrentGate-BodyleakagecurrentGateThresholdVoltageOnstatedraincurrent
ConditionsID=-250µA,VGS=0VVDS=-24V,VGS=0V
TJ=55°C
VDS=0V,VGS=±12VVDS=VGSID=-250µAVGS=-4.5V,VDS=-5VVGS=-10V,ID=-4.2A
StaticDrain-SourceOn-Resistance
VGS=-4.5V,ID=-4A
7
11-0.75
-0.7-25
-1
Min-30
-1-5±100-1.37080120-1-2.2
Typ
Max
UnitsVµAnAVAmΩmΩmΩSVApFpFpFΩnCnCnCnsnsnsnsnsnC
o
gFSVSDIS
VGS=-2.5V,ID=-1AVDS=-5V,ID=-5AForwardTransconductance
IS=-1A,VGS=0VDiodeForwardVoltage
MaximumBody-DiodeContinuousCurrent
DYNAMICPARAMETERSCissInputCapacitanceCossOutputCapacitanceCrssReverseTransferCapacitanceRgGateresistanceSWITCHINGPARAMETERSQgTotalGateChargeQgsGateSourceChargeQgdtD(ontr
tD(offtftrrQrr
GateDrainChargeTurn-OnDelayTimeTurn-OnRiseTimeTurn-OffDelayTimeTurn-OffFallTime
VGS=0V,VDS=-15V,f=1MHzVGS=0V,VDS=0V,f=1MHz
9541157769.4236.33.238.21220.211.2
VGS=-4.5V,VDS=-15V,ID=-4A
VGS=-10V,VDS=-15V,RL=3.6Ω,RGEN=6Ω
IF=-4A,dI/dt=100A/µsBodyDiodeReverseRecoveryTime
BodyDiodeReverseRecoveryChargeIF=-4A,dI/dt=100A/µs
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TYPICALELECTRICALCHARACTERISTICS
XP3401L
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XP3401L
TYPICALELECTRICALCHARACTERISTICS
54-VGS(Volts
321
200
00
2
4
6
8
10
12
-Qg(nC
Figure7:
Gate-ChargeCharacteristics
00
5
10
15
20
25
30
-VDS(Volts
Figure8:
CapacitanceCharacteristics
14001200Capacitance(pF
1000800600400
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XP3401L
SOT-
23
NOTES:
V
1.DIMENSIONINGANDTOLERANCINGPERANSIY14.5M,1982
2.CONTROLLINGDIMENSION:
INCH.DIMABCDGHJKLSV
INCHESMINMAX0.11020.11970.04720.05510.03500.04400.01500.02000.07010.08070.00050.00400.00340.00700.01400.02850.03500.04010.08300.10390.01770.0236
MILLIMETERS
MINMAX2.803.041.201.400.891.110.370.501.782.040.0130.1000.0850.1770.350.690.891.022.102.640.450.60
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