PHD78NQ03LTn沟道增强型场效应管精.docx

PHD78NQ03LTn沟道增强型场效应管精.docx

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PHD78NQ03LTn沟道增强型场效应管精

PHP/PHB/PHD78NQ03LT

N-channelenhancementmodefield-effecttransistor

Rev.01—14November2001

Productdata

1.Productprofile

1.1Description

N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology.Productavailability:

PHP78NQ03LTinSOT78（TO-220ABPHB78NQ03LTinSOT404（D2-PAKPHD78NQ03LTinSOT428（D-PAK.

1.2Features

sLowon-stateresistance

sFastswitching

1.3Applications

sComputermotherboards

sDCtoDCconverters

1.4Quickreferencedata

sVDS=25V

sPtot=93W（Tmb=25°C

sID=75A（Tmb=25°CsRDSon=9mΩ（Tj=25°C

2.Pinninginformation

Table1:

23mb

Pinning-SOT78,SOT404,SOT428simplifiedoutlinesandsymbol

drain（dsource（smountingbase,connectedto

drain（d

mb

[1]

g

MBK116

2

1Topview

3

MBK091

MBB076

SOT78（TO-220AB

[1]

SOT404（D2-PAK

SOT428（D-PAK

Itisnotpossibletomakeconnectiontopin2oftheSOT404orSOT428packages.

3.Limitingvalues

Table2:

Limitingvalues

InaccordancewiththeAbsoluteMaximumRatingSystem（IEC60134.

DSVDGRVGSVGSMID

drain-gatevoltage（DCgate-sourcevoltage（DCgate-sourcevoltagedraincurrent（DC

tp≤50µs;pulsed;

dutycycle25%;Tj≤150°C

Tmb=25°C;VGS=5V;Figure2and3Tmb=100°C;VGS=5V;Figure2Tmb=25°C;VGS=10VTmb=100°C;VGS=10V

IDMPtotTstgTjISISM

peakdraincurrenttotalpowerdissipationstoragetemperature

operatingjunctiontemperature

source（diodeforwardcurrent（DCTmb=25°C

peaksource（diodeforwardcurrentTmb=25°C;pulsed;tp≤10µs

Tmb=25°C;pulsed;tp≤10µs;Figure3Tmb=25°C;Figure1jTj=25to175°C;RGS=20kΩ

---------−55−55--25±15±206143755322893+175+17575228

VVVAAAAAW°C°CAA

Source-draindiode

4.Thermalcharacteristics

Table3:

Rth（j-mbRth（j-a

Thermalcharacteristics

Figure4

verticalinstillair;SOT78package

mountedonaprintedcircuitboard;minimumfootprint;SOT404andSOT428packages

1.66050

K/WK/WK/W

thermalresistancefromjunctiontomountingbase

thermalresistancefromjunctiontoambient

4.1Transientthermalimpedance

5.Characteristics

Table4:

Characteristics

T

=25°Cunlessotherwisespecified.V（BRDSSdrain-sourcebreakdownvoltage

ID=0.25mA;VGS=0VTj=25°CTj=−55°C

VGS（th

gate-sourcethresholdvoltage

ID=1mA;VDS=VGS;Figure9Tj=25°CTj=175°CTj=−55°C

IDSS

drain-sourceleakagecurrent

VDS=25V;VGS=0VTj=25°CTj=175°C

IGSSRDSon

gate-sourceleakagecurrentdrain-sourceon-stateresistance

VGS=±15V;VDS=0V

VGS=5V;ID=25A;Figure7and8Tj=25°CTj=175°CVGS=10V;ID=25A;Tj=25°C

DynamiccharacteristicsgfsQg（totQgsQgdCissCossCrsstd（ontrtd（offtfVSDtrrQrr

forwardtransconductancetotalgatechargegate-sourcechargegate-drain（Millerchargeinputcapacitanceoutputcapacitance

reversetransfercapacitanceturn-ondelaytimeturn-onrisetimeturn-offdelaytimeturn-offfalltime

source-drain（diodeforwardvoltageIS=25A;VGS=0V;Figure12reverserecoverytimerecoveredcharge

IS=20A;dIS/dt=−100A/µs;VDS=25VVDD=15V;ID=25A;VGS=10V;RG=5.6Ω;resistiveload

VGS=0V;VDS=25V;f=1MHz;Figure11VDS=25V;ID=50A

ID=50A;VDD=15V;VGS=5V;Figure13

--------------34134.84.238915*********0.954032

---5.6--3313048601.2--SnCnCnCpFpFpFnsnsnsnsVnsnC

-7.65

9

mΩ

--11.520.7

13.524.3

mΩmΩ

---0.05-10

10500100

µAµAnA

10.5-1.5--2-2.3

VVV

2522

----VV

1074-

Source-draindiode

939775008916©KoninklijkePhilipsElectronicsN.V.2001.Allrightsreserved.

939775008916©KoninklijkePhilipsElectronicsN.V.2001.Allrightsreserved.

939775008916©KoninklijkePhilipsElectronicsN.V.2001.Allrightsreserved.

6.Packageoutline

Plasticsingle-endedpackage;heatsinkmounted;1mountinghole;3-leadTO-220AB

SOT78

Fig14.SOT78（TO-220AB.

939775008916

©KoninklijkePhilipsElectronicsN.V.2001.Allrightsreserved.

Plasticsingle-endedsurfacemountedpackage（PhilipsversionofD2-PAK;3leads（oneleadcropped

SOT404

Fig15.SOT404（D2-PAK

939775008916

©KoninklijkePhilipsElectronicsN.V.2001.Allrightsreserved.

PhilipsSemiconductorsPHP/PHB/PHD78NQ03LTN-channelenhancementmodefield-effecttransistorPlasticsingle-endedsurfacemountedpackage（PhilipsversionofD-PAK;3leads（oneleadcroppedSOT428seatingplaneyAEb2AA1mountingbaseA2D1E1DHEL22LL11b1ee1b3wMAc010scale20mmDIMENSIONS（mmaretheoriginaldimensionsAUNITmax.mm2.382.22A1（10.650.45A20.890.71b0.890.71b1max.1.10.9b25.365.26c0.40.2D1EDmax.max.max.6.225.984.814.456.736.47E1min.4.0ee1HEmax.10.49.6L2.952.55L1min.0.5L20.70.5w0.2ymax.0.22.2854.57Note1.Measuredfromheatsinkbacktolead.OUTLINEVERSIONSOT428REFERENCESIECJEDECTO-252EIAJSC-63EUROPEANPROJECTIONISSUEDATE98-04-0799-09-13Fig16.SOT428（D-PAK939775008916©KoninklijkePhilipsElectronicsN.V.2001.Allrightsreserved.ProductdataRev.01—14November200111of14

PhilipsSemiconductorsPHP/PHB/PHD78NQ03LTN-channelenhancementmodefield-effecttransistor7.RevisionhistoryTable5:

RevDate0120011114RevisionhistoryCPCNDescriptionProductdata;initialversion.939775008916©KoninklijkePhilipsElectronicsN.V.2001.Allrightsreserved.ProductdataRev.01—14November200112of14

PhilipsSemiconductorsPHP/PHB/PHD78NQ03LTN-channelenhancementmodefield-effecttransistor8.DatasheetstatusDatasheetstatus[1]ObjectivedataPreliminarydataProductstatus[2]DevelopmentQualificationDefinitionThisdatasheetcontainsdatafromtheobjectivespecificationforproductdevelopment.PhilipsSemiconductorsreservestherighttochangethespecificationinanymannerwithoutnotice.Thisdatasheetcontainsdatafromthepreliminaryspecification.Supplementarydatawillbepublishedatalaterdate.PhilipsSemiconductorsreservestherighttochangethespecificationwithoutnotice,inordertoimprovethedesignandsupplythebestpossibleproduct.Thisdatasheetcontainsdatafromtheproductspecification.PhilipsSemiconductorsreservestherighttomakechangesatanytimeinordertoimprovethedesign,manufacturingandsupply.ChangeswillbecommunicatedaccordingtotheCustomerProduct/ProcessChangeNotification（CPCNprocedureSNW-SQ-650A.ProductdataProduction[1][2]Pleaseconsultthemostrecentlyissueddatasheetbeforeinitiatingorcompletingadesign.Theproductstatusofthedevice（sdescribedinthisdatasheetmayhavechangedsincethisdatasheetwaspublished.ThelatestinformationisavailableontheInternetatURL.9.DefinitionsShort-formspecification—Thedatainashort-formspecificationisextractedfromafulldatasheetwiththesametypenumberandtitle.Fordetailedinformationseetherelevantdatasheetordatahandbook.Limitingvaluesdefinition—LimitingvaluesgivenareinaccordancewiththeAbsoluteMaximumRatingSystem（IEC60134.Stressaboveoneormoreofthelimitingvaluesmaycausepermanentdamagetothedevice.ThesearestressratingsonlyandoperationofthedeviceattheseoratanyotherconditionsabovethosegivenintheCharacteristicssectionsofthespecificationisnotimplied.Exposuretolimitingvaluesforextendedperiodsmayaffectdevicereliability.Applicationinformation—Applicationsthataredescribedhereinforanyoftheseproductsareforillustrativepurposesonly.PhilipsSemiconductorsmakenorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertestingormodification.10.DisclaimersLifesupport—Theseproductsarenotdesignedforuseinlifesupportappliances,devices,orsystemswheremalfunctionoftheseproductscanreasonablybeexpectedtoresultinpersonalinjury.PhilipsSemiconductorscustomersusingorsellingtheseproductsforuseinsuchapplicationsdosoattheirownriskandagreetofullyindemnifyPhilipsSemiconductorsforanydamagesresultingfromsuchapplication.Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechanges,withoutnotice,intheproducts,includingcircuits,standardcells,and/orsoftware,describedorcontainedhereininordertoimprovedesignand/orperformance.PhilipsSemiconductorsassumesnoresponsibilityorliabilityfortheuseofanyoftheseproducts,conveysnolicenceortitleunderanypatent,copyright,ormaskworkrighttotheseproducts,andmakesnorepresentationsorwarrantiesthattheseproductsarefreefrompatent,copyright,ormaskworkrightinfringement,unlessotherwisespecified.11.TrademarksTrenchMOS—isatrademarkofKoninklijkePhilipsElectronicsN.V.ContactinformationForadditionalinformation,pleasevisit.Forsalesofficeaddresses,sende-mailto:

sales.addresses@.939775008916Fax:

+31402724825©KoninklijkePhilipsElectronicsN.V.2001.Allrightsreserved.ProductdataRev.01—14November200113of14

PhilipsSemiconductorsPHP/PHB/PHD78NQ03LTN-channelenhancementmodefield-effecttransistorContents11.11.21.31.42344.1567891011Productprofile..........................1Description............................1Features..............................1Applications...........................1Quickreferencedata.....................1Pinninginformation......................1Limitingvalues..........................2Thermalcharacteristics...................4Transientthermalimpedance....