JP016717A翻译文档格式.docx

JP016717A翻译文档格式.docx

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H01L21/202

H01L21/2682

H01L21/3362

H01L29/7862

（21）Applicationnumber:

2006-187963

（71）Applicant:

MITSUBISHIELECTRICCORP

（22）Dateoffiling:

07.07.2006

（72）Inventor:

YURASHINSUKE

SONOATSUHIRO

OKAMOTOTATSUKI

SUGAHARAKAZUYUKI

YAMAYOSHIICHIJI

（54）MANUFACTURINGMETHODOFPOLYCRYSTALLINESILICONFILM

（57）Abstract:

PROBLEMTOBESOLVED:

Toprovideamethodformanufacturingapolycrystallinesiliconfilmbywhichuniformitycanbeimprovedincrystalgrainsizeofthepolycrystallinesiliconfilmformedbylaserannealing.

SOLUTION:

Thepolycrystallinesiliconfilmisformedbycrystallizinganamorphoussiliconfilmof60nmormoreinthicknesswhichisformedonasubstratebylaserannealing,wherebylaserwithwavelengthsof390nmto640nm（YAG2ωlaser,forexample）isappliedinanatmosphereunderanoxygenpartialpressureof2Paorless.Inthiscase,anirradiationenergydensity（forexample,withinarangeRgof0.366to0.378J/cm2）oflaserisselectedsothattheaveragecrystalgrainsizeofthepolycrystallinesiliconfilmformedbylaserannealingmaybewithinarangeof0.28μm±

0.03μm.Thepolycrystallinesiliconfilmismanufacturedfromtheamorphoussiliconfilmbyperforminglaserannealingattheselectedirradiationenergydensity.Inthisway,thepolycrystallinesiliconfilmwhichexhibitsasmallstandarddeviationrelativevalueofcrystalgrainsizecanbeformedandtheuniformityofitscrystalgrainsizecanbeimproved.

CLAIM+DETAILEDDESCRIPTION

[Claim（s）]

[Claim1]

Itishowtomanufactureapolycrystallinesiliconfilm,

Aprocessofforminganamorphoussiliconfilmofnotlessthan60nmofthicknessonasubstrate,

Acrystallizationstagewhichcrystallizessaidamorphoussiliconfilmandformsapolycrystallinesiliconfilmbylaserannealingwhichoxygentensionirradiateswithlaserwithawavelengthof390nm-640nminatmosphereof2Paorless,

Apreparation,

Saidcrystallizationstage,

Aselectionprocessofselectingirradiationenergydensityoflaserwhichbecomeswithinthelimitswhosemeanparticlediameterofacrystalofapolycrystallinesiliconfilmformedofsaidlaserannealingis0.28micrometer**0.03micrometer,

Amanufacturingprocesswhichperformssaidlaserannealingwithirradiationenergydensityoflaserselectedatsaidselectionprocess,andmanufacturessaidpolycrystallinesiliconfilm,

Amanufacturingmethodofa****（ing）polycrystallinesiliconfilm.

[Claim2]

Inamanufacturingmethodofthepolycrystallinesiliconfilmaccordingtoclaim1,

Aspecificprocessofspecifyingalowerlimitofirradiationenergydensityoflaserwhichunevennessoftheshapeofamusclewhichmetinthedirectionverticaltoascanningdirectionoflaseronthesurfaceofapolycrystallinesiliconfilmformedofsaidlaserannealingproduces,

Itpreparesforapan,

Amanufacturingmethodofapolycrystallinesiliconfilmselectingsaidirradiationenergydensityinsaidselectionprocessinarangetoalowerlimitto95%ofthelowerlimitsconcernedofirradiationenergydensityoflaserspecifiedatsaidspecificprocess.

[Claim3]

Ameasuringprocesswhichmeasuresintensityofthescatteredlightwhichirradiateswithapredeterminedlightwhichcontainedvisiblelighttoeachsurfaceofapolycrystallinesiliconfilmformedbyperformingsaidlaserannealing,changingsaidirradiationenergydensity,andarescatteredaboutoneachsurfaceconcerned,

Whilespecifyinganextremumof4whichgraph-izesintensityofsaidscatteredlighttosaidirradiationenergydensitybasedonameasurementresultobtainedbysaidmeasuringprocess,andbecomesorderwithsaidlowirradiationenergydensityfromthe1stmaximalvalue,1stminimalvalue,2ndmaximalvalue,and2ndminimalvalue,

Amanufacturingmethodofapolycrystallinesiliconfilmcharacterizedbyselectingsaidirradiationenergydensityfromtherangeof**10mJ/cm2centeringonirradiationenergydensitycorrespondingtosaid1stminimalvalueinsaidselectionprocess.

[Claim4]

Inamanufacturingmethodofthepolycrystallinesiliconfilmaccordingtoclaim3,

Amanufacturingmethodofapolycrystallinesiliconfilm,whereinsaidpredeterminedlightiswhitelight.

[Claim5]

Ameasuringprocesswhichmeasuresintensityofthescatteredlightwhichirradiateswithapredeterminedlightwhichcontainedvisiblelighttoeachsurfaceofapolycrystallinesiliconfilmformedbyperformingsaidlaserannealing,changingirradiationenergydensityofsaidlaser,andarescatteredaboutoneachsurfaceconcerned,

Amanufacturingprocesswhichperformssaidlaserannealingwithirradiationenergydensityselectedfromtherangeof**10mJ/cm2centeringonirradiationenergydensitycorrespondingtosaid2ndminimalvalue,andmanufacturessaidpolycrystallinesiliconfilm,

[DetailedDescriptionoftheInvention]

[FieldoftheInvention]

[0001]

Thisinventionrelatestothemethodofirradiatinganamorphoussiliconfilmwithlaserandobtainingapolycrystallinesiliconfilm.

[BackgroundoftheInvention]

[0002]

Now,[thepictureelementpartofaliquidcrystalpaneloranorganicelectroluminescence（electroluminescence）panel]Switchingbythethinfilmtransistor（TFT:

ThinFilmTransistor）onglassorthesubstratemadefromsyntheticquartzwhichwasamorphousorwasformedinthesiliconefilmofpolycrystalconstitutesthepicture.Althoughmainlyinstalledoutsideindependentlynow,ifthedrivercircuitwhichdrivesapictureelementtransistortothisliquidcrystalpanelcanbeconstitutedsimultaneously,afastmeritcanbeobtainedinrespectofthemanufacturingcostofaliquidcrystalpaneloranorganicELpanel,reliability,etc.Now,sincethecrystallinityofthesiliconefilmwhichconstitutestheactivelayerofTFTisbad,theperformanceofTFTrepresentedbythemobilityofacarrierislow,andproductionoftheintegratedcircuitinwhichrapidityandhighlyefficientnaturearedemandedisdifficult.InordertoimprovethecrystallinityofasiliconefilmforthepurposeofrealizingTFTwhichhasacarrierofhighmobility,generallyheattreatment（laserannealing）bylaserradiationisperformed.

[0003]

TherelationbetweenthecrystallinityofasiliconefilmandthecarriermobilityinTFTisexplainedasfollows.Generallythesiliconefilmobtainedbycarryingoutlaserannealingoftheamorphoussiliconfilmisapolycrystal.Thecrystaldefectiscarryingoutlocalizationtothegrainboundaryofthepolycrystal,andthischeckscarriermovementoftheactivelayerofTFT.Therefore,whatisnecessaryistolessenthenumberoftimesofcrossingthegrainboundary,whileacarriermovesanactivelayer,andjusttomakecrystaldefectdensitysmall,inordertomakecarriermobilityinTFThigh.Acrystalgraindiameterislargeandthepurposeoflaserannealinghasacrystaldefectinthegrainboundaryinformingfewpolycrystallinesiliconfilms.

[0004]

Next,themanufacturingmethodoftheconventionalTFTisexplained.First,forexample,siliconoxideisformedonaglasssubstratebyplasmaCVD（ChemicalVaporDeposition:

chemicalsgaseousphasevacuumdeposition）.AnamorphoussiliconfilmisdepositedbyplasmaCVDonthissiliconoxide.Subsequently,theexcimerlaser（XeCl（wavelength:

308nm））orNd:

The2ndharmonicsofanYAGlaser（wavelength:

532nm.）Thefollowing"

YAG2omegalaser"

iscalled.Itglaresonanamorphoussiliconfilm.Thesiliconwhichcarriedoutmeltingcrystallizesandapolycrystallinesiliconfilmisformedastheportionwithwhichthislaserwasirradiatedcarriesoutmeltingoftheamorphoussiliconfilmandtemperaturefallsafterthat.

[0005]

Then,apolycrystallinesiliconfilmispatterned,siliconoxideisformedonthepolycrystallinesiliconfilmafterpatterning,andthemetalmembraneoflowelectricresistance,suchasTa,Cr,andMo,isfurtherformedonit.Andagateelectrodeisformedbypatterningthemetalmembraneconcerned.

[0006]

Subsequently,byperformingiondopingwhichusesasamasktheresistusedforpatterningofagateelectrodeorthegateelectrodeconcerned,theimpurityofNtypeorPtypeisintroducedintoapolycrystallinesiliconfilm,andasource/drainareaisformedinselfalign.Thatis,TFTofannchanneltypeMOS（NMOS）transistorisformedintheportionwhichintroducedtheimpurityofNtype,andTFTofapchanneltypeMOS（PMOS）transistorisformedintheportionintowhichthePtypeimpuritywasintroduced.

[0007]

Then,siliconoxideisdepositedandacontactholeisformedonthesource/drainareaofTFT,and