半导体工艺介绍PACKAGE.pptx
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1,2,Puman,3,WaferManufacturing,FrontEnd,Wafer,Test,BackEnd,CMP,4,（QFP）,Waferbackgrinding,Wafermount,Wafersaw&clean,Dieattach,Epoxycure,Plasmaclean,Wirebond,Molding,Marking,Postmoldcure,Deflash&Trim,Solderplating,Forming&singulation,FVI,Packing,5,:
BTEpoxyPTFEPolyimidecompound,UBMPSVAPPESoldermaskP.R,95Pb/5Sn37Pb/63Sn（,183）NoLead,Ally,Sn3.9/Ag0.6/Cu5.5,235Low-Ally,:
AubondAllybond,LeadFrame:
Substrate:
（tape）,HiTCETMBCBTM!
TAPE:
BlueTapeUVTape,HeatSink:
#,6,Polishingmachine&CMPUVtapeattachmachineDicingmachineUVirradiationmachineTaperemovermachine,Pick&Placemachine,Packagemachine,（F/T）:
trim&form,80,7,!
8,IC,$%IC,&chip（system,）*+,-./0.12IC345,88,99,:
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ICAABBCC45DEFGHIJKLMN,OOOO888,8999,9,EEEP=QRSTUVEWX,PP=QQRRSSTTUUVVEE,WWXXchipsizeBCYIC3Z,UUU,chip_abcdefUVEgchiphijefkkH,IC,DIP,lmnolpqrmstrusvnqxyqzv=|?
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USMTSurfaceMountingTechnologyBC4?
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USOPSmallOut-LinePackage/SOJSmall,Out-LineJ-Leadpackage?
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QuarterSizeOutlinePackage:
QuarterSizeVerySmallOutlinePackage,13,14,TU?
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1,1.PBGA（PasticBGA）,ball:
0.550.75mmballcount:
1001000ballpitch:
1.01.7mmsubstrateThk:
0.56mmbodyThk:
1.561.73mmPKGThk:
2.162.33mm2.LBGA（Low-profileBGA）ball:
0.300.60mmballcount:
1001000ballpitch:
0.81.0mmsubstrateThk:
0.36mmbodyThk:
0.90mmPKGThk:
1.301.60mm,26,3.LTBGA（Low-profileTapeBGA）,ball:
0.45mmballcount:
1001000ballpitch:
0.80mmsubstrateThk:
0.1mmbodyThk:
0.80mmPKGThk:
1.20mm4.TFBGA（Thin&FinepitchBGA）ball:
0.300.60mmballcount:
1001000ballpitch:
0.501.0mmsubstrateThk:
0.36mmbodyThk:
0.89mmPKGThk:
1.201.60mm,27,5.TFTBGA（Thin&Fine-pitchTapeBGA）,ball:
0.40mmballcount:
1001000ballpitch:
0.75mmsubstrateThk:
0.10mmbodyThk:
0.75mmPKGThk:
1.10mm6.EDHSBGA（ExposedDrop-inHeatSinkBGA）ball:
0.75mmballcount:
1001000ballpitch:
1.27mmsubstrateThk:
0.56mmbodyThk:
1.73mmPKGThk:
2.33mm,28,6.STFBGA（StackedThin&Fine-pitchBGA）,ball:
0.801.0mmballcount:
1001000ballpitch:
0.40mmsubstrateThk:
0.26mmbodyThk:
0.96mmPKGThk:
1.40mm,7.CDTBGA（CavityDownTapeBGA）,ball:
0.600.75mmballcount:
1001000ballpitch:
1.01.27mmsubstrateThk:
1.01.2mmbodyThk:
1.01.2mmPKGThk:
1.60mm,29,8.L2BGA/EBGA,（LaserlaminateBGA/EnhancedBGA）LaserlaminateBGA/EnhancedBGAarecavitydown,thermallyenhancedBGAwithlaminatedsubstrate.Theyaresuitableforsolutionsforhighpowerdissipationapplications（6w）.L2BGAwithlaserdrilledviaenhancescircuitryEBGAusesBTlaminatedwithmultiplelayersataverycompetitivecost.Superiorelectricalperformanceisachievedbymultiplemetallayerlaminatebasedconstruction.ball:
0.600.75mmballcount:
1001000ballpitch:
1.01.27mmsubstrateThk:
1.01.2mmbodyThk:
1.01.2mmPKGThk:
1.60mm,30,9.MCMBGA（Multi-chipModuleBGA）,ball:
0.600.75mmballcount:
1001000ballpitch:
1.27mmsubstrateThk:
0.56mmbodyThk:
1.561.73mmPKGThk:
2.162.33mm10.FCBGA（FlipChipBGA）ball:
0.600.75mmballcount:
1002000ballpitch:
1.01.27mmsubstrateThk:
1.02.0mmbodyThk:
3.0mmPKGThk:
3.5mm,31,BGA,HPBGA（HighPerformanceBGA）,chiparrayBGA,TapeArrayBGA,TapesuperBGA,AB#CD:
MicroBGA,ViperBGA,32,BGA,33,!
UVWXY,34,MCM（MultiChipModule）,35,ONPQR9:
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37,SiP（SysteminPackage）,Semiconductorindustrydemandsforhigherlevels,ofintegration,lowercosts,andagrowingawarenessof,completesystemconfigurationhavecontinuedtodrive,SysteminPackage（SiP）solutions.,SiP,:
38,CSP（ChipScalePackage）Z!
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FlipChip,40,FlipChip（?
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C4（ControlledCollapseChipConnection）?
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CSP:
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1,42,CSPFGBHIJKRedistributionProcessResult,43,ETCSPExtremelyThinCSP,44,FCCSPChipScaleCSP,ball:
0.30mmballcount:
100200ballpitch:
0.75mm,substrateThk:
0.5mm,bodyThk:
1.0mm,PKGThk:
1.2mm,QuadFlatNo-lead,QFN,Leadwidth:
0.180.30mmLeadlcount:
10200leadpitch:
0.40.8mmbodyThk:
0.65mmPKGThk:
0.85mm,45,WLCSP（WaferLevelCSP）,WLCSP（）:
.,:
WAFER,WAFERBackgrind,WAFERmonut/Saw,VisualInspect,Pick&Placetotray,Pack&ShipDie,WAFERBumping,WAFERProbe,LaserMark,SiP/Leadframe/laminatepack,ship,WAFERmonut/Saw,46,47,:
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升级会员 